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Sensitivity Analysis Of Algan/Gan Hemts To Process Variation, Adam J. Liddle
Sensitivity Analysis Of Algan/Gan Hemts To Process Variation, Adam J. Liddle
Theses and Dissertations
A sensitivity analysis of AlGaN/GaN HEMT performance on material and process variations was performed. Aluminum mole fraction, barrier thickness, and gate length were varied ± 5% over nominal values to determine how sensitive simulated device performance was to changes in these 3 parameters. Simulated data was generated with the Synopsys TCAD software suite using a physics-based HEMT model. To validate model performance, simulated data was correlated with experimental data, which consisted of wafer epilayer characterization data as well as DC and small-signal RF device performance data from 1-26 GHz. Trends were observed in the experimental data due to variations in …