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Engineering Commons™

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Electromagnetics and Photonics

Selected Works

2015

Leakage currents

Articles 1 - 4 of 4

Full-Text Articles in Engineering

Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal Apr 2015

Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal Apr 2015

Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal Apr 2015

Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska Feb 2015

Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska

Grigory Simin

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.

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