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Full-Text Articles in Engineering
Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska
Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
One of the requirements for choosing a proper power electronic device for a converter is that it must possess a low specific on-resistance. The specific on-resistance of a bipolar device is related to the base width and doping concentration of the lightly doped drift region. This means that the doping concentration and the width of the low-doped base region in a bipolar device must be carefully considered to achieve a desired avalanche breakdown voltage and on-resistance. In order to determine the technological parameters of a semiconductor device, a one dimensional analysis is used to calculate the minimum depletion layer width, …
Influence Of Defects And Impurities On Solar Cell Performance, Vinay Budhraja
Influence Of Defects And Impurities On Solar Cell Performance, Vinay Budhraja
Dissertations
Multicrystalline silicon (mc-Si) solar cells exhibit high impurity content and higher density of crystal defects such as grain boundaries, dislocations, stacking faults and impurity precipitates. Even though the effect of dislocations on mc-Si solar cell performance has been studied, a severe lack of understanding of the quantitative effects of dislocations on cell parameters still exists. Some correlation has been reported under the assumption of a uniform distribution of dislocation density and a negligible effect of front and back surface recombination velocity. This assumption can cause a significant error as the current mc-Si technology provides good surface passivation by SiN:H and …