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Full-Text Articles in Engineering
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Dissertations
Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras
Legacy Theses & Dissertations (2009 - 2024)
One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.
The Impact Of Quantum Size Effects On Thermoelectric Performance In Semiconductor Nanostructures, Adithya Kommini
The Impact Of Quantum Size Effects On Thermoelectric Performance In Semiconductor Nanostructures, Adithya Kommini
Masters Theses
An increasing need for effective thermal sensors, together with dwindling energy resources, have created renewed interests in thermoelectric (TE), or solid-state, energy conversion and refrigeration using semiconductor-based nanostructures. Effective control of electron and phonon transport due to confinement, interface, and quantum effects has made nanostructures a good way to achieve more efficient thermoelectric energy conversion. This thesis studies the two well-known approaches: confinement and energy filtering, and implements improvements to achieve higher thermoelectric performance. The effect of confinement is evaluated using a 2D material with a gate and utilizing the features in the density of states. In addition to that, …
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Open Access Theses & Dissertations
Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong
Legacy Theses & Dissertations (2009 - 2024)
Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: …
Ultrafast Laser Material Processing For Photonic Applications, Mark Ramme
Ultrafast Laser Material Processing For Photonic Applications, Mark Ramme
Electronic Theses and Dissertations
Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam. This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the lightmatter interaction mechanism occurring at high …
Crystal Growth, Characterization And Fabrication Of Cdznte-Based Nuclear Detectors, Ramesh Madhu Krishna
Crystal Growth, Characterization And Fabrication Of Cdznte-Based Nuclear Detectors, Ramesh Madhu Krishna
Theses and Dissertations
In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials …
Effect Of Mechanical Vibrations On Light Emitting Diode Luminaires, Jayalakshmi Paladugu
Effect Of Mechanical Vibrations On Light Emitting Diode Luminaires, Jayalakshmi Paladugu
UNLV Theses, Dissertations, Professional Papers, and Capstones
In this work, a LED and two types of Compact fluorescent lamps were investigated for the intensity variation due to mechanical vibrations in the range of 0 to 30 HZ. In general, subjecting the lamps to 24-hour vibration affects the total intensity percentage variations of peak intensities after vibrations is in the range of -25 to +15% compared to those of no vibrations for the light emitting diode luminaires. For the case of compact fluorescent lamps (Nuvue) the variations are in range from +10 to +35%, whereas for the Compact fluorescent lamps (Ecosmart) the intensity peaks range from -10 to …
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Theses
Semiconductor random access memories are complex systems that can be described by performance parameters such as memory cycle time, access delays, storage capacity, bit packing density, chip area and retention time. In this thesis, tradeoffs between cycle time, chip area, and storage size as reflected by bit line capacitance (Cbl) were studied as a function of particular design variables: memory cell capacitance (Cc); CMOS flip-flop sense amplifier (SA) transistor sizes; and size of precharge (PC), and word line (WL) switches. Performance was optimized using circuit simulation software, HSPICE, to observe DRAM and SRAM waveforms. With TSMC 0.18 micron technology, minimum …
Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor
Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor
Theses
Silicon carbide (SiC) is a semiconductor with attractive properties, such as a wide bandgap (3. 26 eV), high dielectric strength, and high thermal conductivity that make it suitable for high power, highspeed electronic devices. A major roadblock to its wider application is the presence of defects, particularly micropipes and dislocations, in SiC wafers produced today and decreasing density of these defects is the most important challenge of the industry. The goal of this thesis was to design, build and test a system for detection and analysis of the defects in SiC wafers. The system is based on the reflection optical …
Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li
Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li
Dissertations
In high-frequency ranges, the present electronic design automation software has limited capabilities to model electromagnetic (EM) systems where there are strong field effects influencing their characteristics. In this situation, a full-wave simulation tool is desired for the analysis and design of high-speed and non-linear EM systems. It is necessary to explore the interaction between the field and electronic components during a transient process when field effects are more significant. The finite-difference time-domain (FDTD) technique receives growing attention in the area of EM system analysis and simulation due to its simplicity, flexibility and robustness. It is a full-wave simulation method that …
Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi
Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi
Theses
The objective of this thesis was to develop a reliable multi-wavelength pyrometer for simultaneous measurement of the wafer temperature and its optical properties in the wavelength range of 1 to 20 microns and temperature range of 30 to 1500° C. The spectral emissometer has been utilized for measurement of the temperature dependent optical properties of InP, AlN and Sapphire. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel approach using the spectral ernissometer. The temperature determination capability of the emissometer was tested and verified using a …
Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj
Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj
Theses
Mobility, resistivity, and total impurity concentration of several purchased p-type silicon samples with known resistivities were measured by Hall effect, experiments utilizing the Van Der Pauw method. The silicon samples will serve as Hall effect standards for future measurements on other semiconductor materials, particularly gallium nitride ion cluster beam (ICB) deposited thin films. The samples which were Freshly etched with hydrofluoric acid had measurement values of 455 cm ² / V.sec, 45.9 Ω cm, and 2.6 X 1014 cm³ for mobility, resistivity, and total impurity concentration, respectively. The mobility values were within 9.9 per cent, of the published values …