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Full-Text Articles in Engineering
Effects Of N-Type Doping On Algan Material Quality, Devendra Diwan
Effects Of N-Type Doping On Algan Material Quality, Devendra Diwan
Theses and Dissertations
The field of group III-nitride semiconductors has seen incredible developments during last couple of decades. They are recognized as the most promising materials for a wide field of optoelectronics and electronic devices. Their bandgap ranges from 6.2 eV for AlN to 0.7 eV for InN, covering a wide spectral range from infrared (1.77 mm) to deep ultraviolet (200 nm). Their direct bandgap makes them useful for fabricating optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodetectors. III-nitride semiconductor materials also possess strong bond strengths and exhibit good structural, chemical and thermal stability. These properties make it …
Design Of A Microengineered Pressure Sensor, Ranjeet Alexis
Design Of A Microengineered Pressure Sensor, Ranjeet Alexis
Theses
A new family of microengineered vacuum ionization gauges of an approximate volume of 200µ3 has been designed. These devices can he fabricated using existing semiconductor processing capabilities. The focus of this thesis is to scale down the current state-of-the-art for ionization sensors to micron dimensions. These gauges can be manufactured economically and potentially will be integrated with more complex structures and circuitry. In these devices an active ionization volume of micron dimensions is used for launching ions in a trajectory towards a collection electrode. Ionization of gas species is accomplished by an electron flux of sufficient energy. Analysis of …