Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Review And Characterization Of Gallium Nitride Power Devices, Edward Andrew Jones
Review And Characterization Of Gallium Nitride Power Devices, Edward Andrew Jones
Masters Theses
Gallium Nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This thesis reviews the characteristics and commercial status of both vertical and lateral GaN power devices from the user perspective, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, …
Simulation Of Gan Based Mis Varactor, Bojidha Babu
Simulation Of Gan Based Mis Varactor, Bojidha Babu
Theses and Dissertations
This work deals with novel microwave switches based on III-Nitride varactors. RF switches, power limiters and other control devices are important components of various RF systems, such as wireless modules of laptops, tablets, cell phones etc., satellites communication systems, radars, multi-band wireless and aerospace communications, phased array antennas and so worth. Traditional RF switches are fabricated using pin diodes or MEMS, Si MOSFETs or GaAs HEMTs. These devices have a number of fundamental limitations. Si or GaAs based devices suffer from a low breakdown voltage and cannot handle high RF power. Pin-diodes require large forward currents and do not allow …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …