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An Investigation Of The Optical Absorption Properties Of Silicon As Related To Its Electrical Conductivity, Onofrio Louis Russo

Dissertations

The purpose of this study is to demonstrate the feasibility of obtaining the electrical conductivity of band gap semiconductors, by considering the absorption of radiation in the visible region. The experimental evidence confirmed predictions that the conductivities of the silicon samples are related to the horizontal displacement of energy in the absorption curves. The material used in this study was p-doped silicon, although the approach should be valid in general for either elemental or compound semiconductors.

The absorption coefficient for silicon was measured in the radiation region between 2.0 and 3.0 ev. This region above the indirect band gap (= …

Optimal Control And Identification Of Stochastic Systems Using Differential Game Theory, Harry Marvin Burbank

Dissertations

This dissertation deals with linear systems subjected to stochastic disturbances. The class of stochastic processes considered is the class of second order stochastic processes characterized by having finite continuous covariance. The properties of the covariance provide means to formulate optimization problems without the difficulties present when the covariance is not finite or continuous.

The first aspect studied was several classes of optimal control problems. The effects of the stochastic processes were approximated by the effects of its first two moments. This procedure resulted in allowing optimal system controls to be found whatever the first two moments of the stochastic input …

Design Of A Yig-Tuned Oscillator, Tien Liang Jin

Theses

A technique for designing YIG (yttrium-iron garnet) tuned transistor oscillators, tunable over the range of frequencies from 500 to 950 MHZ, is presented. The approach taken differs appreciably from that used in the design of conventional LC-tuned oscillators. One major difference is that the YIG tuning mechanism is electrically controlled. The YIG tuning element is treated as a single unit and is not resolved into an equivalent LC circuit. Instead, a direct method using reflection coefficients measured at network terminals to characterize various design stages is applied. The transistor is also characterized by reflection and transmission coefficients, i.e., S-parameters. Thus …