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Full-Text Articles in Engineering
Effect Of Z1/2, Eh5, And Ci1 Deep Defects On The Performance Of N-Type 4h-Sic Epitaxial Layers Schottky Detectors: Alpha Spectroscopy And Deep Level Transient Spectroscopy Studies, M. A. Mannan, S. K. Chaudhuri, K. V. Nguyen, K. C. Mandal
Effect Of Z1/2, Eh5, And Ci1 Deep Defects On The Performance Of N-Type 4h-Sic Epitaxial Layers Schottky Detectors: Alpha Spectroscopy And Deep Level Transient Spectroscopy Studies, M. A. Mannan, S. K. Chaudhuri, K. V. Nguyen, K. C. Mandal
Faculty Publications
No abstract provided.
Experimental Determination Of Electron-Hole Pair Creation Energy In 4h-Sic Epitaxial Layer: An Absolute Calibration Approach, S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal
Experimental Determination Of Electron-Hole Pair Creation Energy In 4h-Sic Epitaxial Layer: An Absolute Calibration Approach, S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal
Faculty Publications
No abstract provided.
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Faculty Publications
No abstract provided.
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
Faculty Publications
Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The …