Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 8 of 8
Full-Text Articles in Engineering
Predicted Properties Of Microhollow Cathode Discharges In Xenon, J. P. Boeuf, L. C. Pitchford, K. H. Schoenbach
Predicted Properties Of Microhollow Cathode Discharges In Xenon, J. P. Boeuf, L. C. Pitchford, K. H. Schoenbach
Bioelectrics Publications
A fluid model has been developed and used to help clarify the physical mechanisms occurring in microhollow cathode discharges (MHCD). Calculated current-voltage (I-V) characteristics and gas temperatures in xenon at 100 Torr are presented. Consistent with previous experimental results in similar conditions, we find a voltage maximum in the I-V characteristic. We show that this structure reflects a transition between a low-current, abnormal discharge localized inside the cylindrical hollow cathode to a higher-current, normal glow discharge sustained by electron emission from the outer surface of the cathode. This transition, due to the geometry of …
Series Operation Of Direct Current Xenon Chloride Excimer Sources, Ahmed El-Habachi, Wenhui Shi, Mohamed Moselhy, Robert H. Stark, Karl H. Schoenbach
Series Operation Of Direct Current Xenon Chloride Excimer Sources, Ahmed El-Habachi, Wenhui Shi, Mohamed Moselhy, Robert H. Stark, Karl H. Schoenbach
Bioelectrics Publications
Stable, direct current microhollow cathode discharges in mixtures of hydrochloric acid, hydrogen, xenon, and neon have been generated in a pressure range of 200–1150 Torr. The cathode hole diameter was 250 μm. Sustaining voltages range from 180 to 250 V at current levels of up to 5 mA. The discharges are strong sources of xenon chloride excimer emission at a wavelength of 308 nm. Internal efficiencies of approximately 3% have been reached at a pressure of 1050 Torr. The spectral radiant power at this pressure was measured as 5 mW/nm at 308 nm for a 3 mA discharge. By using …
Direct Current High-Pressure Glow Discharges, Robert H. Stark, Karl H. Schoenbach
Direct Current High-Pressure Glow Discharges, Robert H. Stark, Karl H. Schoenbach
Bioelectrics Publications
Stabilization and control of a high-pressure glow discharge by means of a microhollow cathode discharge has been demonstrated. The microhollow cathode discharge, which is sustained between two closely spaced electrodes with openings of approximately 100 μm diam, serves as plasma cathode for the high-pressure glow. Small variations in the microhollow cathode discharge voltage generate large variations in the microhollow cathode discharge current and consequently in the glow discharge current. In this mode of operation the electrical characteristic of this system of coupled discharges resembles that of a vacuum triode. Using the microhollow cathode discharge as plasma cathode it was possible …
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Bioelectrics Publications
A novel, nonequilibrium, high-pressure, direct current discharge, the microhollow cathode discharge, has been found to be an intense source of xenon and argon excimer radiation peaking at wavelengths of 170 and 130 nm, respectively. In argon discharges with a 100 μm diam hollow cathode, the intensity of the excimer radiation increased by a factor of 5 over the pressure range from 100 to 800 mbar. In xenon discharges, the intensity at 170 nm increased by two orders of magnitude when the pressure was raised from 250 mbar to 1 bar. Sustaining voltages were 200 V for argon and 400 V …
Studies Of High Field Conduction In Diamond For Electron Beam Controlled Switching, R. P. Joshi, M. K. Kennedy, K. H. Schoenbach, W. W. Hofer
Studies Of High Field Conduction In Diamond For Electron Beam Controlled Switching, R. P. Joshi, M. K. Kennedy, K. H. Schoenbach, W. W. Hofer
Bioelectrics Publications
Experimental studies on a vertical metal‐diamond‐silicon switch structure have been conducted for potential pulsed power applications. Both the dc current‐voltage characteristics and the transient switching response have been measured for a range of voltages. With a 1 μm diamond film, the switch has been seen to withstand electric fields up to 1.8 MV/cm. Our results show a polarity dependence which can be associated with current injection at the asymmetric contacts. Polarity effects were also observed in the presence of e‐beam excitation, and arise due to nonuniform carrier generation near the diamond‐silicon interface. Our switching transients were seen to follow …
Bistable Behavior Of The Dark Current In Copper-Doped Semi-Insulating Gallium Arsenide, R. A. Roush, K. H. Schoenbach, R. P. Brinkmann
Bistable Behavior Of The Dark Current In Copper-Doped Semi-Insulating Gallium Arsenide, R. A. Roush, K. H. Schoenbach, R. P. Brinkmann
Bioelectrics Publications
The dark current characteristics of gallium arsenide doped with silicon and compensated with diffused copper were found to have a pronounced region of current controlled negative differential conductivity (ndc) similar to the characteristics of a thyristor. The resistivity of the semi‐insulating semiconductor was measured to be 105 Ω cm for applied voltages up to 2.2 kV, which corresponds to an average electric field of 38 kV/cm. At higher voltages, a transition to a stable high current state was observed with a current rate of rise exceeding 1011 A/s. There is evidence of the formation of at least one …
Electrical Properties Of Hydrogenated Diamond, Sacharia Albin, Linwood Watkins
Electrical Properties Of Hydrogenated Diamond, Sacharia Albin, Linwood Watkins
Electrical & Computer Engineering Faculty Publications
Hydrogen passivation of deep traps in diamond is demonstrated. Current‐voltage (I‐V) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I‐V characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the I‐V data. It is shown that hydrogenation is an alternative to deep‐level transient spectroscopy, suitable for …
A Bulk Optically Controlled Semiconductor Switch, Rudolf K.F. Germer, Karl H. Schoenbach, Stephen G.E. Pronko
A Bulk Optically Controlled Semiconductor Switch, Rudolf K.F. Germer, Karl H. Schoenbach, Stephen G.E. Pronko
Bioelectrics Publications
Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photoconductivity, respectively, have been demonstrated with copper‐doped II‐VI semiconductor crystals. The increase of the conductivity (turn‐on) was realized with a xenon flash‐lamp pulse of 15‐μs duration. A reduction of the conductivity (turn‐off) was obtained by irradiating the samples with IR light using an 8‐ns Nd:YAG laser pulse (YAG denotes yttrium aluminum garnet). For turn‐on in CdS:Cu the conductivity follows the xenon flash excitation. The turn‐off time constant was 250 ns. ZnS and ZnSe crystals showed a slower response. A memory effect for the IR light was observed.