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Electrical and Electronics

Series

2004

Articles 1 - 12 of 12

Full-Text Articles in Engineering

Simulation Of Gate Lag And Current Collapse In Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, Grigory Simin Nov 2004

Simulation Of Gate Lag And Current Collapse In Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, Grigory Simin

Faculty Publications

Results of two-dimensional numerical simulations of gate lag and current collapse in GaN heterostructurefield-effect transistors are presented. Simulation results clearly show that current collapse takes place only if an enhanced trapping occurs under the gate edges. Hot electrons play an instrumental role in the collapse mechanism. The simulation results also link the current collapse with electrons spreading into the buffer layer and confirm that a better electron localization (as in a double heterostructurefield-effect transistor) can dramatically reduce current collapse.

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Achromatic Angle-Insensitive Infrared Quarter-Wave Retarder Based On Total Internal Reflection At The Si–Sio2 Interface, R. M.A. Azzam, Cristina L. Spinu Oct 2004

Achromatic Angle-Insensitive Infrared Quarter-Wave Retarder Based On Total Internal Reflection At The Si–Sio2 Interface, R. M.A. Azzam, Cristina L. Spinu

Electrical Engineering Faculty Publications

An achromatic infrared (λ = 1.2–4 μm), Si-prism quarter-wave retarder (QWR) is described that uses total internal reflection at a buried Si–SiO2 interface at an angle of incidence φ near 33°, where ∂Δ/∂φ = 0. The retardance Δ deviates from 90° by <±2° within a field of view of ±10° (in air) over the entire bandwidth. Because the SiO2 layer at the base of the prism is optically thick, this QWR is unaffected by environmental contamination.

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Electrical Characterization And Testing Of Microelectronic Materials, Devices, And Circuits, David Kotecki Sep 2004

Electrical Characterization And Testing Of Microelectronic Materials, Devices, And Circuits, David Kotecki

University of Maine Office of Research Administration: Grant Reports

This project, strengthening the microelectronics program in the Electrical and Computer Engineering Department (ECE), proposes to establish an electrical characterization and test laboratory which will provide the capability for measuring electrical properties of materials, devices, and circuits. Electrical test equipment for the measurement and characterization of dielectric materials, devices, and circuit components, will be acquired in order to provide students with hands-on experience in electrical measurements complementing the other labs in the ECE Department. In addition to providing training in microelectronics testing, the facility will allow for expanded research in the area of solid-state electronics. Focusing on material characterization, including …

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Volume Holographic Recording And Readout For 90-Deg Geometry, Partha P. Banerjee, Monish Ranjan Chatterjee, Nickolai Kukhtarev, Tatiana Kukhtareva Sep 2004

Volume Holographic Recording And Readout For 90-Deg Geometry, Partha P. Banerjee, Monish Ranjan Chatterjee, Nickolai Kukhtarev, Tatiana Kukhtareva

Electrical and Computer Engineering Faculty Publications

When a prerecorded cross-beam hologram is reconstructed (so-called edge-lit readout) with a uniform plane wave and a point source, the resulting exact solutions reveal Bessel-function-type diffracted beam profiles, which are fundamentally modified under weak propagational diffraction. The case of a profiled beam readout with propagational diffraction may be analyzed using a transfer function approach based on 2-D Laplace transforms. In a second series of investigations, dynamic readout from a cross-beam volume hologram recorded with two orthogonal uniform plane waves is considered for various dependences of the refractive index modulation with intensity. Typically, refractive index profiles that are proportional to the …

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Volume Holographic Optical Elements, Ching-Cherng Sun, Partha P. Banerjee Sep 2004

Volume Holographic Optical Elements, Ching-Cherng Sun, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

The final two papers are concerned with the analysis of novel holograms. Banerjee et al. investigate holographic recording and reconstruction for edge-lit holograms recorded in a 90-degree geometry. Various cases of recording and readout that incorporate propagational diffraction have been modeled. It is shown that the 90-degree geometry can result in beam shaping, as evidenced through preliminary experimental results with photorefractive lithium niobate. Nguyen et al. propose a new approach for designing computer-generated holograms. An artificial neural network is used to initiate the genetic algorithm so that the high computation cost of genetic algorithms for synthesizing holograms is significantly reduced …

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Phase Shifts That Accompany Total Internal Reflection At A Dielectric–Dielectric Interface, R. M.A. Azzam Aug 2004

Phase Shifts That Accompany Total Internal Reflection At A Dielectric–Dielectric Interface, R. M.A. Azzam

Electrical Engineering Faculty Publications

The absolute, average, and differential phase shifts that p- and s-polarized light experience in total internal reflection (TIR) at the planar interface between two transparent media are considered as functions of the angle of incidence φ. Special angles at which quarter-wave phase shifts are achieved are determined as functions of the relative refractive index N. When the average phase shift equals π/2, the differential reflection phase shift Δ is maximum, and the reflection Jones matrix assumes a simple form. For N>√3, the average and differential phase shifts are equal (hence δp=3δs) at …

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Simulation Of Hot Electron And Quantum Effects In Algan/Gan Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang Jun 2004

Simulation Of Hot Electron And Quantum Effects In Algan/Gan Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang

Faculty Publications

We report on simulations of electrical characteristics of AlGaN/(InGaN)/GaN heterostructurefield effect transistors with quantum and hot electroneffects taken into account. Polarization charges lead to quantum confinement of electrons in the channel and to the formation of two-dimensional electron gas. The electron quantization leads to the spread of the electronwave function into the barrier and bulk but does not have significant impact on dc electrical characteristics.Hot electrons play an important part in the charge transport by spilling over into the bulk GaN where they are captured by traps. This leads to negative differential conductivity, which is also observed experimentally. The simulation …

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Investigation Of Nanoporous Thin-Film Alumina Templates, Biswajit Das May 2004

Investigation Of Nanoporous Thin-Film Alumina Templates, Biswajit Das

Electrical & Computer Engineering Faculty Research

This paper presents the results of a systematic study of the fabrication of thin-film alumina templates on silicon and other substrates. Such templates are of significant interest for the low-cost implementation of semiconductor and metal nanostructure arrays. In addition, thin-film alumina templates on silicon have the potential for nanostructure integration with silicon electronics. Formation of thin-film alumina templates on silicon substrates was investigated under different fabrication conditions, and the dependence of pore morphology and pore formation rate on process parameters was evaluated. In addition, process conditions for improved pore size distribution and periodicity were determined. The template/silicon interface, important for …

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A Wireless Traffic Probe For Radio Resource Management And Qos Provisioning In Ieee 802.11 Wlans, Mark Davis Jan 2004

A Wireless Traffic Probe For Radio Resource Management And Qos Provisioning In Ieee 802.11 Wlans, Mark Davis

Conference papers

The emergence of real-time services such as voice over IP (VoIP) and video streaming imposes stringent requirements on the performance of a network if quality of service (QoS) targets are to be achieved. In the case of wireless networks, some form of radio resource management (RRM) is typically required to allocate the available resources among the contending stations in accordance with their needs and respective priorities. A critical aspect of any RRM scheme is the ability to monitor resource usage and to determine the resource requirements on a per-station basis. In this paper we describe a wireless traffic probe for …

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A Fast And Simple Algorithm For Computing M-Shortest Paths In State Graph, M. Sherwood, Laxmi P. Gewali, Henry Selvaraj, Venkatesan Muthukumar Jan 2004

A Fast And Simple Algorithm For Computing M-Shortest Paths In State Graph, M. Sherwood, Laxmi P. Gewali, Henry Selvaraj, Venkatesan Muthukumar

Electrical & Computer Engineering Faculty Research

We consider the problem of computing m shortest paths between a source node s and a target node t in a stage graph. Polynomial time algorithms known to solve this problem use complicated data structures. This paper proposes a very simple algorithm for computing all m shortest paths in a stage graph efficiently. The proposed algorithm does not use any complicated data structure and can be implemented in a straightforward way by using only array data structure. This problem appears as a sub-problem for planning risk reduced multiple k-legged trajectories for aerial vehicles.

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Microscopic Analysis For Water Stressed By High Electric Fields In The Prebreakdown Regime, R. P. Joshi, J. Qian, K. H. Schoenbach, E. Schamiloglu Jan 2004

Microscopic Analysis For Water Stressed By High Electric Fields In The Prebreakdown Regime, R. P. Joshi, J. Qian, K. H. Schoenbach, E. Schamiloglu

Bioelectrics Publications

Analysis of the electrical double layer at the electrode-water interface for voltages close to the breakdown point has been carried out based on a static, Monte Carlo approach. It is shown that strong dipole realignment, ion-ion correlation, and finite-size effects can greatly modify the electric fields and local permittivity (hence, leading to optical structure) at the electrode interface. Dramatic enhancements of Schottky injection, providing a source for electronic controlled breakdown, are possible. It is also shown that large pressures associated with the Maxwell stress tensor would be created at the electrode boundaries. Our results depend on the ionic density, and …

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Are Microbubbles Necessary For The Breakdown Of Liquid Water Subjected To A Submicrosecond Pulse?, R. P. Joshi, J. Qian, G. Zhao, J. Kolb, K. H. Schoenbach, E. Schamiloglu, J. Gaudet Jan 2004

Are Microbubbles Necessary For The Breakdown Of Liquid Water Subjected To A Submicrosecond Pulse?, R. P. Joshi, J. Qian, G. Zhao, J. Kolb, K. H. Schoenbach, E. Schamiloglu, J. Gaudet

Electrical & Computer Engineering Faculty Publications

Electrical breakdown in homogeneous liquid water for an ∼ 100 ns voltage pulse is analyzed. It is shown that electron-impact ionization is not likely to be important and could only be operative for low-density situations or possibly under optical excitation. Simulation results also indicate that field ionization of liquid water can lead to a liquid breakdown provided the ionization energies were very low in the order of 2.3eV. Under such conditions, an electric-field collapse at the anode and plasma propagation toward the cathode, with minimal physical charge transport, is predicted. However, the low, unphysical ionization energies necessary for matching …

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