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Electrical and Electronics

Series

1999

Articles 1 - 11 of 11

Full-Text Articles in Engineering

Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur Nov 1999

Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur

Faculty Publications

We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm2/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10−2. This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the 1/f …

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Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski Nov 1999

Piezoelectric Doping In Alingan/Gan Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, A. D. Bykovski

Faculty Publications

We report on the piezoelectricdoping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H–SiC substrates. The contribution of piezoelectricdoping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectricdoping for GaN-based electronics.

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Differential Reflection Phase Shift Under Conditions Of Attenuated Internal Reflection, R. M.A. Azzam Jul 1999

Differential Reflection Phase Shift Under Conditions Of Attenuated Internal Reflection, R. M.A. Azzam

Electrical Engineering Faculty Publications

The angle-of-incidence dependence of the differential reflection phase shift Δ between p and s polarizations is considered a function of the real and imaginary parts of the relative complex dielectric function ε of an interface in the domain of fractional optical constants, i.e., under conditions of internal reflection. The constraint on complex ε such that oscillatory and monotonic angular responses are obtained is determined. A sensitive and stable technique, which is based on attenuated internal reflection ellipsometry between the Brewster angle and the critical angle, is proposed for measuring small induced absorption (εi∼10−5) in the medium …

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Laser Beam Profile Deformation Effect During Bragg Acousto-Optic Interaction: A Non-Paraxial Approximation, Ray S. Huang, Chen-Wen Tarn, Partha P. Banerjee, Doungchin Cao Jul 1999

Laser Beam Profile Deformation Effect During Bragg Acousto-Optic Interaction: A Non-Paraxial Approximation, Ray S. Huang, Chen-Wen Tarn, Partha P. Banerjee, Doungchin Cao

Electrical and Computer Engineering Faculty Publications

It is commonly known that the spatial profiles of the diffracted light beams during Bragg acousto-optic interaction are distorted due to the Bragg angle selection mechanism. All the conventional studies on this effect use the paraxial approximation. But this approximation should be amended when the incident angle of the light is large enough that the diffracted light waves do not propagate closely along the optic axis of the acousto-optic diffraction system. By using a spatial Fourier transform approach, we rigorously study the light beam profile deformation effect of the diffracted light during the Bragg acousto-optic interaction beyond the paraxial approximation. …

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Guest Editorial: Special Section On Acousto-Optic Devices And Optical Information Processing: Research And Developments, Partha P. Banerjee, Ting-Chung Poon Jul 1999

Guest Editorial: Special Section On Acousto-Optic Devices And Optical Information Processing: Research And Developments, Partha P. Banerjee, Ting-Chung Poon

Electrical and Computer Engineering Faculty Publications

This guest editorial provides an overview of the topical area and an introduction to the articles featured in the special section.

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Examination Of Beam Propagation In Misaligned Holographic Gratings And Comparison With The Acousto-Optic Transfer Function Model For Profiled Beams, Monish Ranjan Chatterjee, David D. Reagan Jul 1999

Examination Of Beam Propagation In Misaligned Holographic Gratings And Comparison With The Acousto-Optic Transfer Function Model For Profiled Beams, Monish Ranjan Chatterjee, David D. Reagan

Electrical and Computer Engineering Faculty Publications

A transfer function formalism developed earlier for the propagation of profiled optical beams through acousto-optic Bragg cells is revisited and applied to a thick holographic grating. The results based on the holographic coupled wave model and the acousto-optic multiple scattering model are shown to be compatible, and equivalent parameters such as the Q and grating strength are defined for the two systems. Results for a Gaussian spatial profile are numerically computed and compared. For the holographic grating, a profiled beam may be interpreted as an angular misalignment or Bragg-angle mismatch problem. The case of Bragg-wavelength mismatch is also investigated for …

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Resonant Tank Motor Model For Voltage Reflection Simulations With Pwm Drives, Davia W. Schlegel, Glenn T. Wrate, Russ Kerkman, Gary Skibinski May 1999

Resonant Tank Motor Model For Voltage Reflection Simulations With Pwm Drives, Davia W. Schlegel, Glenn T. Wrate, Russ Kerkman, Gary Skibinski

Conference Papers in Published Proceedings

Reflected wave transient voltages that are impressed on drive output cables and low voltage AC induction motors are normally simulated with steep fronted dv/dt pulse waveforms from PWM voltage source inverters. System simulation arises from a need to correlate reflected wave peak voltage and risetime with the dielectric insulation capability of both the motor and cable. To obtain reasonable results, accurate models of each component must be employed. This investigation concentrates on parameter identification for a high frequency resonant tank motor model from fractional to several hundred horsepower.

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Performance Optimization And Light-Beam-Deviation Analysis Of The Parallel-Slab Division-Of-Amplitude Photopolarimeter, Aed M. El-Saba, Rasheed M.A. Azzam, Mustafa A. G. Abushagur May 1999

Performance Optimization And Light-Beam-Deviation Analysis Of The Parallel-Slab Division-Of-Amplitude Photopolarimeter, Aed M. El-Saba, Rasheed M.A. Azzam, Mustafa A. G. Abushagur

Electrical Engineering Faculty Publications

A division-of-amplitude photopolarimeter that uses a parallel-slab multiple-reflection beam splitter was described recently [Opt. Lett. 21, 1709 (1996)]. We provide a general analysis and an optimization of a specific design that uses a fused-silica slab that is uniformly coated with a transparent thin film of ZnS on the front surface and with an opaque Ag or Au reflecting layer on the back. Multiple internal reflections within the slab give rise to a set of parallel, equispaced, reflected beams numbered 0, 1, 2, and 3 that are intercepted by photodetectors D0, D1, D2, and D …

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Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey May 1999

Low-Temperature Molecular Beam Epitaxy Of Gaas: A Theoretical Investigation Of Antisite Incorporation And Reflection High-Energy Diffraction Oscillations, K. Natarajan, Rama Venkat, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Surface dynamics dominate the incorporation of charged, As+Ga, and neutral, As0Ga, antisite arsenic, and the temporal variation of reflection high-energy electron diffraction(RHEED) intensity in the low-temperature molecular beam epitaxy of (100) gallium arsenide(GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. The PA layer dictates the incorporation and concentration of As+Ga and As0Ga. Additionally, it influences the RHEED oscillations (ROs) behavior and the RO’s dependence on its coverage through its contribution to the reflected intensity. The model results for the dependence of As+Ga and As0Ga concentrations …

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Direct Current Glow Discharges In Atmospheric Air, Robert H. Stark, Karl H. Schoenbach Jan 1999

Direct Current Glow Discharges In Atmospheric Air, Robert H. Stark, Karl H. Schoenbach

Bioelectrics Publications

Direct current glow discharges have been operated in atmospheric air by using 100 μm microhollow cathode discharges as plasma cathodes. The glow discharges were operated at currents of up to 22 mA, corresponding to current densities of 3.8 A/cm2 and at average electric fields of 1.2 kV/cm. Electron densities in the glow are in the range from 1012 to 1013  cm−3. Varying the current of the microhollow cathode discharge allows us to control the current in the atmospheric pressure glow discharge. Large volume atmospheric pressure air plasmas can be generated by operating microhollow cathode discharges …

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Direct Current High-Pressure Glow Discharges, Robert H. Stark, Karl H. Schoenbach Jan 1999

Direct Current High-Pressure Glow Discharges, Robert H. Stark, Karl H. Schoenbach

Bioelectrics Publications

Stabilization and control of a high-pressure glow discharge by means of a microhollow cathode discharge has been demonstrated. The microhollow cathode discharge, which is sustained between two closely spaced electrodes with openings of approximately 100 μm diam, serves as plasma cathode for the high-pressure glow. Small variations in the microhollow cathode discharge voltage generate large variations in the microhollow cathode discharge current and consequently in the glow discharge current. In this mode of operation the electrical characteristic of this system of coupled discharges resembles that of a vacuum triode. Using the microhollow cathode discharge as plasma cathode it was possible …

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