Engineering Commons^™

Cdte Doped With Zn Grown On Si(111) And Si(211) Using The Closed Space Sublimation Method, Jose Alberto Valdez

Open Access Theses & Dissertations

Cadmium telluride (CdTe) doped with zinc (Zn) has been used for the fabrication of X-ray imaging devices. CdTe allows the device to have the same image quality at a lower X-ray dose. When silicon is used as a substrate for CdTe growth, this reduces the cost and allows the readout circuitry to be fabricated on the same substrate. However, material quality and device performance needs to be addressed since the lattice parameters of CdTe (6.482 Å) and Si (5.431 Å) result in a 19% lattice mismatch.

In this work, CdTe doped with Zn is deposited on Si (211) and Si …

Growth And Analysis Of Micro And Nano Cdte Arrays For Solar Cell Applications, Brandon Adrian Aguirre

Open Access Theses & Dissertations

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ~20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 …