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Cdte Doped With Zn Grown On Si(111) And Si(211) Using The Closed Space Sublimation Method, Jose Alberto Valdez
Cdte Doped With Zn Grown On Si(111) And Si(211) Using The Closed Space Sublimation Method, Jose Alberto Valdez
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Cadmium telluride (CdTe) doped with zinc (Zn) has been used for the fabrication of X-ray imaging devices. CdTe allows the device to have the same image quality at a lower X-ray dose. When silicon is used as a substrate for CdTe growth, this reduces the cost and allows the readout circuitry to be fabricated on the same substrate. However, material quality and device performance needs to be addressed since the lattice parameters of CdTe (6.482 Å) and Si (5.431 Å) result in a 19% lattice mismatch.
In this work, CdTe doped with Zn is deposited on Si (211) and Si …