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Reversible Photoluminescence Quenchin Of Cdse/Zns Quantum Dots Embedded In Porous Glass By Ammonia Vapor, A. O. Orlova, Yu A. Gromova, V. G. Maslov, O. V. Andreeva, A. V. Baranov, A. V. Federov, A. V. Prudnikau, M. V. Artemyev, Kevin Berwick
Reversible Photoluminescence Quenchin Of Cdse/Zns Quantum Dots Embedded In Porous Glass By Ammonia Vapor, A. O. Orlova, Yu A. Gromova, V. G. Maslov, O. V. Andreeva, A. V. Baranov, A. V. Federov, A. V. Prudnikau, M. V. Artemyev, Kevin Berwick
Articles
The photoluminescence response of semiconductor CdSe/ZnS quantum dots embedded in a borosilicate porous glass matrix to exposure to ammonia vapor is investigated. Formation of surface complexes on the quantum dots results in quenching of the photoluminescence and a shortening of the luminescence decay time. The process is reversible, desorption of ammonia molecules from the quantum dot surface causes the photoluminescence to recover. The sensitivity of the quantum dot luminescence intensity and decay time to the interaction time and the reversibility of the photoluminescence changes makes the CdSe/ZnS quantum dot in porous glass system a candidate for use as an optical …
Analysis Of Strain And Intermixing In Single-Layer Ge/Si Quantum Dots Using Polarized Raman Spectroscopy, Anna Baranov, A. V. Federov, Tatiana Perova, R. A. Moore, V. Yam, D. Bouchier, V. Le Thanh, Kevin Berwick
Analysis Of Strain And Intermixing In Single-Layer Ge/Si Quantum Dots Using Polarized Raman Spectroscopy, Anna Baranov, A. V. Federov, Tatiana Perova, R. A. Moore, V. Yam, D. Bouchier, V. Le Thanh, Kevin Berwick
Articles
The built-in strain and composition of as-grown and Si-capped single layers of Ge∕Si dots grown at various temperatures (460–800 °C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700–800 °C the observations are in agreement with a model of the Ge∕Si dot consisting of a Si-rich boundary region and …