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Electrical and Electronics

University of Tennessee, Knoxville

Gate driver

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Full-Text Articles in Engineering

Modeling, Measurement And Mitigation Of Fast Switching Issues In Voltage Source Inverters, Wen Zhang Aug 2021

Modeling, Measurement And Mitigation Of Fast Switching Issues In Voltage Source Inverters, Wen Zhang

Doctoral Dissertations

Wide-bandgap devices are enjoying wider adoption across the power electronics industry for their superior properties and the resulting opportunities for higher efficiency and power density. However, various issues arise due to the faster switching speed, including switching transient voltage overshoot, unstable oscillation, gate driving and evaluation difficulty, measurement and monitoring challenge, and potential load insulation degradation. This dissertation first sets out to model and understand the switching transient voltage overshoots. Unique oscillation patterns and features of the turn-on and turn-off overvoltage are discovered and analyzed, which provides new insights into the switching transient. During the experimental characterization, a new unstable …


Design And Analysis Of A Fully-Integrated Resonant Gate Driver, Yu Long Dec 2016

Design And Analysis Of A Fully-Integrated Resonant Gate Driver, Yu Long

Doctoral Dissertations

Several decades ago the resonant gate driving technique was proposed. Given the recent rapid growth in GaN HEMT power device applications for high-frequency power applications, research has been conducted in the power electronics field using resonant gate driving for GaN power devices. Previous research for resonant gate drivers for GaN HEMT devices mostly focused on implementing the gate driving function itself, and mostly for normally-on HEMT devices.

The normally-off (enhancement mode) GaN power device was introduced to the commercial market in 2009. A new resonate gate driver is proposed in this work to implement resonant gate driving for commercial high-speed …