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Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta
Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta
Legacy Theses & Dissertations (2009 - 2024)
Silicon Carbide (SiC) devices are slowly becoming one of the most reliable choices for high power density, high switching frequency applications with higher efficiency than Gallium Nitride (GaN) and Silicon (Si) devices. For a wide range of applications, such as Electric Motor Drives, Switching Power Supplies, and Renewable Energy Circuits, SiC devices are being tested and are found to yield prominent results.In this research, the characterization of two similarly rated commercially available SiC devices - a trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and a cascoded Junction Field Effect Transistor (JFET) are done. It is followed by a comparative analysis of both …