Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Electric measurements (7)
- Doping (5)
- Electrical resistivity (5)
- Crystal defects (4)
- Epitaxy (4)
-
- Phonons (4)
- Semiconductor surfaces (4)
- Activation energies (3)
- Antimony compounds (3)
- Gamma ray detectors (3)
- Gamma rays (3)
- Leak detectors (3)
- Leakage currents (3)
- Liquid phase deposition (3)
- Materials properties (3)
- Sulphur compounds (3)
- Surface barrier (3)
- Absorption coefficients (2)
- Absorption spectra (2)
- Carrier mobility (2)
- Chemical vapor deposition (2)
- Crystalline semiconductors (2)
- Down-conversion (2)
- Electrochemistry (2)
- Elemental semiconductors (2)
- Etching (2)
- Germanium (2)
- Hall effect (2)
- Nanocrystals (2)
Articles 1 - 24 of 24
Full-Text Articles in Engineering
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Krishna C. Mandal
No abstract provided.
In Situ Infrared Evidence For The Electrochemical Incorporation Of Hydrogen Into Si And Ge, K. C. Mandal, F. Ozanam, J.-N. Chazalviel
In Situ Infrared Evidence For The Electrochemical Incorporation Of Hydrogen Into Si And Ge, K. C. Mandal, F. Ozanam, J.-N. Chazalviel
Krishna C. Mandal
No abstract provided.
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Krishna C. Mandal
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Characterizations Of Antimony Tri‐Sulfide Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Characterizations Of Antimony Tri‐Sulfide Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Krishna C. Mandal
No abstract provided.
Doping Dependence Of Electronic And Mechanical Properties Of Gase1−XTeX And Ga1−XInXSe From First Principles, Zs. Rak, S. D. Mahanti, K. C. Mandal, N. C. Fernelius
Doping Dependence Of Electronic And Mechanical Properties Of Gase1−XTeX And Ga1−XInXSe From First Principles, Zs. Rak, S. D. Mahanti, K. C. Mandal, N. C. Fernelius
Krishna C. Mandal
No abstract provided.
Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Characterizations Of Antimony Tri‐Sulfide Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Characterizations Of Antimony Tri‐Sulfide Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal
Krishna C. Mandal
No abstract provided.
In Situ Infrared Evidence For The Electrochemical Incorporation Of Hydrogen Into Si And Ge, K. C. Mandal, F. Ozanam, J.-N. Chazalviel
In Situ Infrared Evidence For The Electrochemical Incorporation Of Hydrogen Into Si And Ge, K. C. Mandal, F. Ozanam, J.-N. Chazalviel
Krishna C. Mandal
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Krishna C. Mandal
No abstract provided.