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Reliability Study Of Zr And Al Incorporated Hf Based High-K Dielectric Deposited By Advanced Processing, Md Nasir Uddin Bhuyian

Dissertations

Hafnium-based high-x dielectric materials have been successfully used in the industry as a key replacement for SiO₂ based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with higher x values in order to scale the equivalent oxide thickness (EOT) to 0.7 nm or below while achieving low defect densities. In addition, next generation devices need to meet challenges like improved channel mobility, reduced gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to …