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Electrical and Electronics

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2015

Doping

Articles 1 - 6 of 6

Full-Text Articles in Engineering

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Apr 2015

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal Apr 2015

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal Apr 2015

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Apr 2015

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal Apr 2015

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.

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Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan Feb 2015

Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan

Grigory Simin

We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×1013 cm−2 holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 1013 cm−2 or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …

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