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Metal oxide semiconductor field-effect transistors | Metal oxide semiconductor field-effect transistors -- Engineering | Transistors -- Power process applications
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Hot Carrier Reliability Of Lateral Dmos Transistors In Power Process Applications, Vicky O'Donovan
Hot Carrier Reliability Of Lateral Dmos Transistors In Power Process Applications, Vicky O'Donovan
Theses
The purpose of this study is to investigate and validate the mechanism of hot carrier degradation of the LDMOS device. The LDMOS device is a new technology to Analog Devices, and a relatively new topic to the semiconductor industry, evident from the limited published research in the field. A prerequisite for device release on a product in the market place, is comprehensive hot carrier reliability testing, as hot carrier degradation has evolved as one of the foremost concerns in submicron devices. Both the high voltage and the structural difference of the LDMOS device, from standard MOSFET device, pose a hot …