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Full-Text Articles in Engineering
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Faculty Publications
No abstract provided.
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Faculty Publications
No abstract provided.
Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications
Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.
Bistable Behavior Of The Dark Current In Copper-Doped Semi-Insulating Gallium Arsenide, R. A. Roush, K. H. Schoenbach, R. P. Brinkmann
Bistable Behavior Of The Dark Current In Copper-Doped Semi-Insulating Gallium Arsenide, R. A. Roush, K. H. Schoenbach, R. P. Brinkmann
Bioelectrics Publications
The dark current characteristics of gallium arsenide doped with silicon and compensated with diffused copper were found to have a pronounced region of current controlled negative differential conductivity (ndc) similar to the characteristics of a thyristor. The resistivity of the semi‐insulating semiconductor was measured to be 105 Ω cm for applied voltages up to 2.2 kV, which corresponds to an average electric field of 38 kV/cm. At higher voltages, a transition to a stable high current state was observed with a current rate of rise exceeding 1011 A/s. There is evidence of the formation of at least one …