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Full-Text Articles in Engineering

Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal Oct 1994

Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal

Faculty Publications

No abstract provided.


Polarized Light Reflectometer, R. M.A. Azzam Sep 1994

Polarized Light Reflectometer, R. M.A. Azzam

Electrical Engineering Faculty Publications

The modulated reflected and nonreflected light fluxes, measured as the azimuth of incident linearly polarized light is varied, yield the absolute reflectances Rp, and Rs, of a dielectric or semiconductor surface. Application to a reflective Si detector determines the refractive index and thickness of a SiO2 film on the detector surface.


An Appraisal Of Electricity Supply In Nigeria And The Privatisation Option, E. I. K. Sule, C. M. Anyanwu Aug 1994

An Appraisal Of Electricity Supply In Nigeria And The Privatisation Option, E. I. K. Sule, C. M. Anyanwu

CBN Occasional Papers

Incessant electric power cuts in most parts of the country has become a normal feature of electricity supply throughout Nigeria. The power outages cause much inconvenience and economic losses to all and sundry. This study has shown that the most critical factor behind the incessant power failure is the problem of inadequate funding of the industry at a time it was forced to accommodate rapid expansion. Other factors include lack of autonomy, inefficiency, poor organization as well as lack of skilled manpower. The paper has examined these problems on the basis of which suggestions are made on how the worrisome …


Direct Relation Between Fresnel's Interface Reflection Coefficients For The Parallel And Perpendicular Polarizations: Erratum 2, R. M.A. Azzam Jul 1994

Direct Relation Between Fresnel's Interface Reflection Coefficients For The Parallel And Perpendicular Polarizations: Erratum 2, R. M.A. Azzam

Electrical Engineering Faculty Publications

The record is set straight concerning two equations that determine the reflection phase shifts at a single interface from the intensity reflectances forp- and s-polarized light at one angle of incidence. These equations appeared previously in this journal [J. Opt. Soc. Am. 69, 1007 (1979); erratum, J. Opt. Soc. Am. 70, 261 (1980)].


The Effects Of Channel Curvature And Protusion Height On Nucleate Boiling And The Critical Heat Flux Of A Simulated Electronic Chip, John E. Leland May 1994

The Effects Of Channel Curvature And Protusion Height On Nucleate Boiling And The Critical Heat Flux Of A Simulated Electronic Chip, John E. Leland

Office for Research Publications and Presentations

The quest for higher power yet smaller electronics has given rise to the need for very effective cooling of these electronics. Because one of the foremost problems in electronics cooling is achieving high heat flux cooling within small packages while expending minimal pumping power, one focus of this study was to investigate the effects of channel curvature on the CHF. Experimental data were obtained for flow rates of 1-7 m/s, subcoolings of 5-35"C, and radii of curvature of 25.4 and 50.8 mm. A correlation was obtained for these data which provided an excellent fit.

One condition that has been ignored …


Field Tests Of The Dolphin--A Remotely Operated Survey Vehicle, M T. Kalcic, Edit J. Kaminsky Jan 1994

Field Tests Of The Dolphin--A Remotely Operated Survey Vehicle, M T. Kalcic, Edit J. Kaminsky

Electrical Engineering Faculty Publications

No abstract provided.


Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha Jan 1994

Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha

Bioelectrics Publications

We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field‐dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data.