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Effect Of Ion Flux (Dose Rate) In Source-Drain Extension Ion Implantation For 10-Nm Node Finfet And Beyond On 300/450mm Platforms, Ming-Yi Shen
Legacy Theses & Dissertations (2009 - 2024)
The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications …
Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak
Study Of Millisecond Laser Annealing On Ion Implanted Soi And Application To Scaled Finfet Technology, Tyler J. Michalak
Legacy Theses & Dissertations (2009 - 2024)
The fabrication of metal-oxide-semiconductor field effect transistors (MOSFET) requires the engineering of low resistance, low leakage, and extremely precise p-n junctions. The introduction of finFET technology has introduced new challenges for traditional ion implantation and annealing techniques in junction design as the fin widths continue to decrease for improved short channel control. This work investigates the use of millisecond scanning laser annealing in the formation of n-type source/drain junctions in next generation MOSFET.