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Full-Text Articles in Engineering
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Biparametric Analyses Of Charge Trapping In Cd0.9Zn0.1Te Based Virtual Frisch Grid Detectors, S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Faculty Publications
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Faculty Publications
No abstract provided.
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Faculty Publications
No abstract provided.
Deep Levels In Gate And Gate:In Crystals Investigated By Deep-Level Transient Spectroscopy And Photoluminescence, Y. Cui, D. D. Caudel, P. Bhattacharya, A. Burger, K. C. Mandal, D. Johnstone, S. A. Payne
Deep Levels In Gate And Gate:In Crystals Investigated By Deep-Level Transient Spectroscopy And Photoluminescence, Y. Cui, D. D. Caudel, P. Bhattacharya, A. Burger, K. C. Mandal, D. Johnstone, S. A. Payne
Faculty Publications
No abstract provided.
Acceptor Levels In Gase:In Crystals Investigated By Deep-Level Transient Spectroscopy And Photoluminescence, Y. Cui, R. Dupere, A. Burger, D. Johnstone, K. C. Mandal, S. A. Payne
Acceptor Levels In Gase:In Crystals Investigated By Deep-Level Transient Spectroscopy And Photoluminescence, Y. Cui, R. Dupere, A. Burger, D. Johnstone, K. C. Mandal, S. A. Payne
Faculty Publications
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Faculty Publications
No abstract provided.
Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Erratum: “Terahertz Studies Of The Dielectric Response And Second-Order Phonons In A Gase Crystal” [Appl. Phys. Lett.87, 182104 (2005)], B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, K. C. Mandal
Faculty Publications
No abstract provided.
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Faculty Publications
No abstract provided.
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Faculty Publications
No abstract provided.