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University of Arkansas, Fayetteville

Silicon carbide

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Full-Text Articles in Engineering

Hybrid Multilevel Converters With Internal Cascaded/Paralleled Structures For Mv Electric Aircraft Applications, Fei Diao Dec 2022

Hybrid Multilevel Converters With Internal Cascaded/Paralleled Structures For Mv Electric Aircraft Applications, Fei Diao

Graduate Theses and Dissertations

Using on-board medium voltage (MV) dc distribution system has been a megatrend for next-generation electric aircraft systems due to its ability to enable a significant system mass reduction. In addition, it makes electric propulsion more feasible using MV power electronic converters. To develop high-performance high-density MV power converters, the emerging silicon carbide (SiC) devices are more attractive than their silicon (Si) counterparts, since the fast switch frequency brought by the SiC can effectively reduce the volume and weight of the filter components and thus increase the converter power density. From the converter topology perspective, with the MV dc distribution, the …


Effect Of Silicon Carbide On Electric Drivetrains Of Heavy-Duty Vehicles, Haley Solera May 2021

Effect Of Silicon Carbide On Electric Drivetrains Of Heavy-Duty Vehicles, Haley Solera

Electrical Engineering Undergraduate Honors Theses

The application of electro-mechanical motors in rigorous, high-temperature systems is constantly adapting to suit the growing needs of developers in the automotive, construction, and aerospace industries. With improved efficiency, torque, and environmental impact over conventional internal combustion engines, electric drive trains pose more than ample incentive for manufacturers to invest considerable resources toward the design of newer, better methods of electric propulsion. This paper discusses the motives behind the electrification of heavy-duty vehicles, the state-of-the-art technology currently available on the market, and the novel application of silicon carbide to electric drive trains as a means of increasing their heat tolerance, …


High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan Dec 2020

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …


Design And Optimization Of A High Power Density Silicon Carbide Traction Inverter, Tyler Adamson Dec 2019

Design And Optimization Of A High Power Density Silicon Carbide Traction Inverter, Tyler Adamson

Graduate Theses and Dissertations

This project was initiated with the goal of demonstrating a 3-phase silicon carbide based 150-kW 25 kW/L DC-AC power conversion unit capable of operation with coolant temperatures up to 90°C. The project goals were met and exceeded by first analyzing the established inverter topologies to find which one would yield the highest power density while still meeting electrical performance needs in the 150-kW range. Following topology selection, the smallest silicon carbide power module that met the electrical requirements of the system was found through experimental testing and simulation. After a power module selection was finalized, a DC link capacitor bank …


A Wide Bandgap Silicon Carbide (Sic) Gate Driver For High Temperature, High Voltage, And High Frequency Applications, Ranjan Raj Lamichhane Dec 2013

A Wide Bandgap Silicon Carbide (Sic) Gate Driver For High Temperature, High Voltage, And High Frequency Applications, Ranjan Raj Lamichhane

Graduate Theses and Dissertations

The potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver circuitry on the same chip, or in the same package, as the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more efficient and reliable electrical and thermal performance of the system.

The design of a gate driver circuit with good performance parameters in this completely new under-development …


Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula Aug 2013

Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula

Graduate Theses and Dissertations

In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due to the above mentioned advantages the power conversion efficiency of SiC devices is better compared to that of silicon (Si) devices.

This thesis studies the implementation of 1200V/17A Normally-off SiC JFETs for an indirect matrix converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. …