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Precise Chemical Analysis Development For Si And Gaas Surfaces, T. A. Briantseva, Z. M. Lebedeva, D. V. Lioubtchenko, M. Nolan, T. S. Perova, R. A. Moore, Kevin Berwick

Articles

Precise chemical analysis (PCA) was developed to allow the study of non-interconnected atoms on crystalline semiconductor surfaces, such as those produced during rapid thermal processing (RTP) of silicon and electron beam lithography on gallium arsenide (GaAs). The PCA method is based on selectively dissolving the different components present on the semiconductor surface using preferential etchant solutions. After etching, the etchant solution, containing the etched component, is analyzed by a photometric technique. In this paper, we present photometric measurements of the amount of “free” (non-interconnected) atoms that remain on semiconductor surfaces following electron beam and RTP processing. In this context, “free” …