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Full-Text Articles in Engineering
Predicted Properties Of Microhollow Cathode Discharges In Xenon, J. P. Boeuf, L. C. Pitchford, K. H. Schoenbach
Predicted Properties Of Microhollow Cathode Discharges In Xenon, J. P. Boeuf, L. C. Pitchford, K. H. Schoenbach
Bioelectrics Publications
A fluid model has been developed and used to help clarify the physical mechanisms occurring in microhollow cathode discharges (MHCD). Calculated current-voltage (I-V) characteristics and gas temperatures in xenon at 100 Torr are presented. Consistent with previous experimental results in similar conditions, we find a voltage maximum in the I-V characteristic. We show that this structure reflects a transition between a low-current, abnormal discharge localized inside the cylindrical hollow cathode to a higher-current, normal glow discharge sustained by electron emission from the outer surface of the cathode. This transition, due to the geometry of …
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Bioelectrics Publications
A novel, nonequilibrium, high-pressure, direct current discharge, the microhollow cathode discharge, has been found to be an intense source of xenon and argon excimer radiation peaking at wavelengths of 170 and 130 nm, respectively. In argon discharges with a 100 μm diam hollow cathode, the intensity of the excimer radiation increased by a factor of 5 over the pressure range from 100 to 800 mbar. In xenon discharges, the intensity at 170 nm increased by two orders of magnitude when the pressure was raised from 250 mbar to 1 bar. Sustaining voltages were 200 V for argon and 400 V …
Studies Of High Field Conduction In Diamond For Electron Beam Controlled Switching, R. P. Joshi, M. K. Kennedy, K. H. Schoenbach, W. W. Hofer
Studies Of High Field Conduction In Diamond For Electron Beam Controlled Switching, R. P. Joshi, M. K. Kennedy, K. H. Schoenbach, W. W. Hofer
Bioelectrics Publications
Experimental studies on a vertical metal‐diamond‐silicon switch structure have been conducted for potential pulsed power applications. Both the dc current‐voltage characteristics and the transient switching response have been measured for a range of voltages. With a 1 μm diamond film, the switch has been seen to withstand electric fields up to 1.8 MV/cm. Our results show a polarity dependence which can be associated with current injection at the asymmetric contacts. Polarity effects were also observed in the presence of e‐beam excitation, and arise due to nonuniform carrier generation near the diamond‐silicon interface. Our switching transients were seen to follow …
Electrical Properties Of Hydrogenated Diamond, Sacharia Albin, Linwood Watkins
Electrical Properties Of Hydrogenated Diamond, Sacharia Albin, Linwood Watkins
Electrical & Computer Engineering Faculty Publications
Hydrogen passivation of deep traps in diamond is demonstrated. Current‐voltage (I‐V) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I‐V characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the I‐V data. It is shown that hydrogenation is an alternative to deep‐level transient spectroscopy, suitable for …