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Full-Text Articles in Engineering
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip
Dissertations
Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Theses
Semiconductor random access memories are complex systems that can be described by performance parameters such as memory cycle time, access delays, storage capacity, bit packing density, chip area and retention time. In this thesis, tradeoffs between cycle time, chip area, and storage size as reflected by bit line capacitance (Cbl) were studied as a function of particular design variables: memory cell capacitance (Cc); CMOS flip-flop sense amplifier (SA) transistor sizes; and size of precharge (PC), and word line (WL) switches. Performance was optimized using circuit simulation software, HSPICE, to observe DRAM and SRAM waveforms. With TSMC 0.18 micron technology, minimum …
Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor
Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor
Theses
Silicon carbide (SiC) is a semiconductor with attractive properties, such as a wide bandgap (3. 26 eV), high dielectric strength, and high thermal conductivity that make it suitable for high power, highspeed electronic devices. A major roadblock to its wider application is the presence of defects, particularly micropipes and dislocations, in SiC wafers produced today and decreasing density of these defects is the most important challenge of the industry. The goal of this thesis was to design, build and test a system for detection and analysis of the defects in SiC wafers. The system is based on the reflection optical …
Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li
Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li
Dissertations
In high-frequency ranges, the present electronic design automation software has limited capabilities to model electromagnetic (EM) systems where there are strong field effects influencing their characteristics. In this situation, a full-wave simulation tool is desired for the analysis and design of high-speed and non-linear EM systems. It is necessary to explore the interaction between the field and electronic components during a transient process when field effects are more significant. The finite-difference time-domain (FDTD) technique receives growing attention in the area of EM system analysis and simulation due to its simplicity, flexibility and robustness. It is a full-wave simulation method that …
Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi
Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi
Theses
The objective of this thesis was to develop a reliable multi-wavelength pyrometer for simultaneous measurement of the wafer temperature and its optical properties in the wavelength range of 1 to 20 microns and temperature range of 30 to 1500° C. The spectral emissometer has been utilized for measurement of the temperature dependent optical properties of InP, AlN and Sapphire. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel approach using the spectral ernissometer. The temperature determination capability of the emissometer was tested and verified using a …
Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj
Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj
Theses
Mobility, resistivity, and total impurity concentration of several purchased p-type silicon samples with known resistivities were measured by Hall effect, experiments utilizing the Van Der Pauw method. The silicon samples will serve as Hall effect standards for future measurements on other semiconductor materials, particularly gallium nitride ion cluster beam (ICB) deposited thin films. The samples which were Freshly etched with hydrofluoric acid had measurement values of 455 cm ² / V.sec, 45.9 Ω cm, and 2.6 X 1014 cm³ for mobility, resistivity, and total impurity concentration, respectively. The mobility values were within 9.9 per cent, of the published values …