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An Investigation Of Electrical And Optical Properties Of Reactively Sputtered Silicon Nitride And Amorphous Hydrogenated Silicon Thin Films, Tae Hoon Kim
Theses
Thin films of silicon nitride and amorphous hydrogenated silicon were prepared by radio frequency reactive sputter deposition and their properties optimized for their use as low temperature passivation coatings for optoelectronic devices. The effect of various sputter deposition parameters on the conduction and optical properties were studied. Infrared spectrophotometry and ellipsometry were used to determined the optical properties of the films whereas the electrical properties were determined from current-voltage measurements of MIS capacitors.
Typical parameters of a sputter deposition run for the best Si3N4 films were: base pressure, 1-2x10-6 torr; sputtering pressure, 5 mtorr; nitrogen partial …