Engineering Commons^™

Resistive Switching In Fto/Cuo-Cu2o/Au Memory Devices, Amir Shariffar, Haider Salman, Tanveer A. Siddique, Wafaa Gebril, M. Omar Manasreh

Electrical Engineering Faculty Publications and Presentations

Memristors are considered to be next-generation non-volatile memory devices owing to their fast switching and low power consumption. Metal oxide memristors have been extensively investigated and reported to be promising devices, although they still suffer from poor stability and laborious fabrication process. Herein, we report a stable and power-efficient memristor with novel heterogenous electrodes structure and facile fabrication based on CuO-Cu2O complex thin films. The proposed structure of the memristor contains an active complex layer of cupric oxide (CuO) and cuprous oxide (Cu2O) sandwiched between fluorine-doped tin oxide (FTO) and gold (Au) electrodes. The fabricated memristors demonstrate bipolar resistive switching …

Vector Magneto-Optical Generalized Ellipsometry On Magnetic Slanted Columnar Heterostructured Thin Films, Chad Briley

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Modern material growth techniques allow for nano-engineering highly complex three dimensionally nanostructured materials. These nano-engineered materials possess highly anisotropic physical properties that are significantly different from that of their bulk counterparts. The magnetization properties of nano-engineered materials can be modified through a close range interaction known as magnetic exchange. These materials are referred to as magnetic exchange-coupled materials. Exchange-coupled magnetic materials are composite magnetic materials where the magnetization of one material is influenced by the magnetization state of the neighboring materials.

The author describes the creation of a representative sample set of exchange-coupled nanoengineered magnetic materials. These materials are created …