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Full-Text Articles in Engineering

Bio-Inspired Multi-Spectral And Polarization Imaging Sensors For Image-Guided Surgery, Nimrod Missael Garcia Dec 2017

Bio-Inspired Multi-Spectral And Polarization Imaging Sensors For Image-Guided Surgery, Nimrod Missael Garcia

McKelvey School of Engineering Theses & Dissertations

Image-guided surgery (IGS) can enhance cancer treatment by decreasing, and ideally eliminating, positive tumor margins and iatrogenic damage to healthy tissue. Current state-of-the-art near-infrared fluorescence imaging systems are bulky, costly, lack sensitivity under surgical illumination, and lack co-registration accuracy between multimodal images. As a result, an overwhelming majority of physicians still rely on their unaided eyes and palpation as the primary sensing modalities to distinguish cancerous from healthy tissue. In my thesis, I have addressed these challenges in IGC by mimicking the visual systems of several animals to construct low power, compact and highly sensitive multi-spectral and color-polarization sensors. I …


Relaxation Rate And Polarization Charge Density Model For Aln/Al$_{X}$Ga$_{1 - X}$N/Aln Heterostructures, Nagarajan Sivarajan, Reeba Korah, Mariya Kalavathy Ganamani Jan 2017

Relaxation Rate And Polarization Charge Density Model For Aln/Al$_{X}$Ga$_{1 - X}$N/Aln Heterostructures, Nagarajan Sivarajan, Reeba Korah, Mariya Kalavathy Ganamani

Turkish Journal of Electrical Engineering and Computer Sciences

This work describes the strain-relaxation--dependent carrier concentration ($n_{s})$ profile model using spontaneous and piezoelectric polarization for AlN/Al$_{x}$Ga$_{1 - x}$N/AlN HEMTs in all mole fraction ($x)$ interpolations. As $x$ varies, the Aluminum Gallium Nitride (AlGaN) channel shows strain relaxation with the Aluminum Nitride (AlN) barrier. The degree of relaxation is modeled from AlN to GaN regions in the channel. It shows that the AlN barrier and buffer relaxation and strain recovery occurs due to the gradual crystal quality degradation from barrier/buffer to the channel interface. These combination devices show less drain current degradation with temperature variation from 300 K to 573 …