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Full-Text Articles in Engineering
Modes Of A Laser Resonator With A Retroreflecting Corner Cube Mirror, Guosheng Zhou, Anthony J. Alfrey, Lee W. Casperson
Modes Of A Laser Resonator With A Retroreflecting Corner Cube Mirror, Guosheng Zhou, Anthony J. Alfrey, Lee W. Casperson
Electrical and Computer Engineering Faculty Publications and Presentations
The self-consistent integral equation for the field distribution of the resonant modes in a resonator with a tilted retroreflecting corner cube mirror is solved. The corner cube acts like a convex lens with radius of curvature -L cot²Ө in the rotation direction (L is the cavity length and Ө the rotation angle) and like a flat plane in the direction of the rotation axis. The field distribution can be described in terms of Hermite-Gaussian functions, and these results have been confirmed experimentally using an Ar-ion laser. The equivalent beam matrix for a reflecting corner cube is also found.
Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart
Seeded Oscillatory Growth Of Si Over Sio² By Cw Laser Irradiation, G.K. Celler, L. E. Trimble, K.K. Ng, H.J. Leamy, H. Baumgart
Electrical & Computer Engineering Faculty Publications
Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
Electrical And Structural Properties Of P-N Junctions In Cw Laser Annealed Silicon, M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp
Electrical And Structural Properties Of P-N Junctions In Cw Laser Annealed Silicon, M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp
Electrical & Computer Engineering Faculty Publications
Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the …