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Design, Modeling And Analysis Of Non-Classical Field Effect Transistors, Peijie Feng
Design, Modeling And Analysis Of Non-Classical Field Effect Transistors, Peijie Feng
Electrical Engineering and Computer Science - Dissertations
Transistor scaling following per Moore's Law slows down its pace when entering into nanometer regime where short channel effects (SCEs), including threshold voltage fluctuation, increased leakage current and mobility degradation, become pronounced in the traditional planar silicon MOSFET. In addition, as the demand of diversified functionalities rises, conventional silicon technologies cannot satisfy all non-digital applications requirements because of restrictions that stem from the fundamental material properties. Therefore, novel device materials and structures are desirable to fuel further evolution of semiconductor technologies. In this dissertation, I have proposed innovative device structures and addressed design considerations of those non-classical field effect transistors …
Delay Extraction Based Equivalent Elmore Model For Rlc On-Chip Interconnects, Shamsul Arefin Siddiqui
Delay Extraction Based Equivalent Elmore Model For Rlc On-Chip Interconnects, Shamsul Arefin Siddiqui
Electronic Thesis and Dissertation Repository
As feature sizes for VLSI technology is shrinking, associated with higher operating frequency, signal integrity analysis of on-chip interconnects has become a real challenge for circuit designers. For this purpose, computer-aided-design (CAD) tools are necessary to simulate signal propagation of on-chip interconnects which has been an active area for research. Although SPICE models exist which can accurately predict signal degradation of interconnects, they are computationally expensive. As a result, more effective and analytic models for interconnects are required to capture the response at the output of high speed VLSI circuits. This thesis contributes to the development of efficient and closed …