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Full-Text Articles in Engineering
Molecular Dynamics Study Of Diffusion Of O2 Penetrates In Uncrosslinked Polydimethysiloxane (Pdms), Crosslinked Pdms, And Pdms-Based Nanocomposites, Varun Ullal
Graduate Theses and Dissertations
Molecular dynamics simulations are used to study diffusion of O2 molecules in pure polydimethysiloxane (PDMS), crosslinked PDMS, and PDMS-based nanocomposites. The PDMS chains and penetrates are modeled using a hybrid interatomic potential which treats the Si-O atoms along the chain backbone explicitly while coarse-graining the methyl side groups and penetrates. By tracking the diffusion of penetrates in the system and subsequently computing their mean-squared displacement, diffusion coefficients are obtained. In pure PDMS models of varying molecular weight, diffusivity of the O22 penetrates is found to have an inverse relationship with chain length. Simulation models with longer chains …
Design And Characterization Of High Temperature Packaging For Wide-Bandgap Semiconductor Devices, Brian Grummel
Design And Characterization Of High Temperature Packaging For Wide-Bandgap Semiconductor Devices, Brian Grummel
Electronic Theses and Dissertations
Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively …
Characterization, Morphology, Oxidation, And Recession Of Silicon Nanowires Grown By Electroless Process, Robert G. Mertens
Characterization, Morphology, Oxidation, And Recession Of Silicon Nanowires Grown By Electroless Process, Robert G. Mertens
Electronic Theses and Dissertations
This dissertation presents heretofore undiscovered properties of Silicon Nanowires (SiNWs) grown by electroless process and presents mathematical solutions to the special problems of the oxidation and diffusion of dopants for SiNWs. Also presented here is a mathematical description of morphology of oxidized SiNWs. This dissertation is comprised of several discussions relating to SiNWs growth, oxidation, morphology and doping. In here is presented work derived from a long-term study of SiNWs. Several important aspects of SiNWs were investigated and the results published in journals and conference papers. The recession of SiNWs was heretofore unreported by other research groups. In our investigations, …