Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Estimating The Dynamic Sensitive Cross Section Of An Fpga Design Through Fault Injection, Darrel E. Johnson
Estimating The Dynamic Sensitive Cross Section Of An Fpga Design Through Fault Injection, Darrel E. Johnson
Theses and Dissertations
A fault injection tool has been created to emulate single event upset (SEU) behavior within the configuration memory of an FPGA. This tool is able to rapidly and accurately determine the dynamic sensitive cross section of the configuration memory for a given FPGA design. This tool enables the reliability of FPGA designs and fault tolerance schemes to be quickly and accurately tested. The validity of testing performed with this fault injection tool has been confirmed through radiation testing. A radiation test was conducted at Crocker Nuclear Laboratory using a proton accelerator in order to determine the actual dynamic sensitive cross …
Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-Submicron Mos Device And Circuit, Zhi Cui
Electronic Theses and Dissertations
Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism …
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability, Yi Liu
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability, Yi Liu
Electronic Theses and Dissertations
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high gain with low noise figure, a LO to generate low noise signal with sufficient output power, wide tuning …