Engineering Commons^™

Design And Comparison Of Si-Based And Sic-Based Three-Phase Pv Inverters, Wei Fu

Theses and Dissertations

The opportunities for both power density and efficiency improvements of photovoltaic (PV) inverter have come with the development of commercially available wide bandgap (WBG) devices such as Gallium Nitride (GaN), and Silicon Carbide (SiC).

In this thesis, how the replacement of Silicon (Si) Insulated Gate Bipolar Transistor (IGBT), with SiC Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) affects the power density and efficiency of a solar inverter implementation is presented. The focus is on achieving a minimum volume of the output filter which meet the current harmonic performance of IEEE standard, while meeting the thermal constraint of the semiconductor device. Efficiency improvements …

Quantum Efficiency Enhancement For Gan Based Light-Emitting Diodes And Vertical Cavity Surface-Emitting Lasers, Fan Zhang

Theses and Dissertations

This thesis explores the improvement of quantum efficiencies for InGaN/GaN heterostructures and their applications in light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Different growth approaches and structural designs were investigated to identify and address the major factors limiting the efficiency. (1) Hot electron overflow and asymmetrical electron/hole injection were found to be the dominant reasons for efficiency degradation in nitride LEDs at high injection; (2) delta p-doped InGaN quantum barriers were employed to improve hole concentration inside the active region and therefore improve hole injection without sacrificing the layer quality; (3) InGaN active regions based on InGaN multiple …

Growth And Characterization Of Non-Polar Gan Materials And Investigation Of Efficiency Droop In Ingan Light Emitting Diodes, Xianfeng Ni

Theses and Dissertations

General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since …