Engineering Commons^™

Experimental Ion Implantation System For Decaborane Ions, Vijay Babaram

Theses

Future generations of Si technology will require ultra shallow junctions (tens of nm) in the drain and source regions of MOS transistors. Fabrication of such shallow p-type junctions requires implantation of boron at ultra low energies (< 1 keV), below the limits of standard ion implantation technology. A proposed solution involves implantation of B₁₀H_x⁺ ions in which boron atoms carry less than 10% of the beam energy.

This thesis is a part of the feasibility study of this new technology. An experimental ion implantation system was designed and built at Ion Beam and Thin Film Lab, NJIT. The system was tested and the mass analyzing magnet was calibrated using argon ions. Decaborane ions, …

Development Of An Ion Source For Implantation Of Decaborane, Ravidath Gurudath

Theses

Future generations of Si technology will require ultra shallow junctions (tens of nm) in the drain and source regions of MOS transistors. Fabrication of such shallow p-type junctions requires implantation of boron at ultra low energies (≡1keV), below the limits of standard ion implantation technology. A proposed solution involves implantation of B₁₀H_X⁺ ions in which boron atoms carry less than 10% of the beam energy. Thus shallow implantation may be possible with standard ion implanters operating at tens of kV.

This thesis is a part of the feasibility study of this novel technology. The ionization of …

A Novel Beam-Assisted Thickness Measurement Technique For Nanostructures, Luis Manual Casas

Theses

A novel method for measuring thickness of thin films has been developed. This method is straightforward, quickly accomplished, and offers resolution of device layers approaching that given by transmission electron microscopy. Ion beam bombardment of a multi-layer structure forms a crater in which the crater sidewalls are beveled at a very shallow angle, revealing various layers within the sample at a high degree of magnification. Beveled film thicknesses are measured by scanning Auger electron spectroscopy. Depth profilometry is used to measure the shallow beveling angle. Through knowledge of the beveled layer thickness and the bevel angle, actual film thicknesses are …

Fabrication And Characterization Of Wsi2/P-Si And Tasi2/P-Si Devices, Anitha Kodali

Theses

Thin films Silicides of Tungsten and Tantalum have become very important for IC manufacturing. W and TaSi₂ films were deposited on silicon substrates by CVD and Co-sputtering techniques respectively. These films have been characterized using current-voltage technique. The analysis of the obtained experimental measurements has been performed in the light of Schottky-Mott theory. The effects of annealing were studied using Rapid Thermal Processing technique in the temperature range of 500 to 700°C, in nitrogen atmosphere at a constant pressure of 5x10^-6 ton for a duration of 30 seconds.The increase in annealing temperature resulted in the formation of ohmic …

Control Of Stress In Silicon Nitride Thin Films, Ajay Krishnan

Theses

Silicon nitride thin films of varying composition and thickness were deposited on silicon substrates by reactive rf diode sputtering of a silicon target using an argon/nitrogen gas mixture. Film stoichiometry could be controlled by varying the partial pressure of nitrogen, the total sputtering gas pressure and the target rf power. Films with refractive index of 2.01, the value for stoichiometric silicon nitride, could be obtained. Film stress was measured by wafer curvature; refractive index and thickness of deposited films were obtained by ellipsometry and interferometry measurements. The etch rate in buffered HF for films with refractive index 2.05 was 29A/min; …