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Microstructure And Electrical Performance Of Sputter-Deposited Hafnium Oxide (Hfo2) Thin Films, Brandon Adrian Aguirre

Open Access Theses & Dissertations

Hafnium oxide (HfO2) based dielectrics have been currently considered as the possible replacements for the traditional gate-oxide (SiO2) of the complementary metal-oxide semiconductor (CMOS) devices. The high dielectric constant, wide band gap, and thermal stability in contact with Si make HfO2 a potential material for application in CMOS devices. The performance of HfO2 as a gate oxide material, however, depends on its quality and interface structure with Si. In this work, HfO2 thin films have been deposited by rf sputtering onto Si(100) substrates under varying growth temperatures (Ts). The objective of the work is to understand the growth and microstructure …