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Full-Text Articles in Engineering
Rf To Millimeter-Wave Linear Power Amplifiers In Nanoscale Cmos Soi Technology, Jing-Hwa Chen
Rf To Millimeter-Wave Linear Power Amplifiers In Nanoscale Cmos Soi Technology, Jing-Hwa Chen
Open Access Dissertations
The low manufacturing cost, integration capability with baseband and digital circuits, and high operating frequency of nanoscale CMOS technologies have propelled their applications into RF and microwave systems. Implementing fully-integrated RF to millimeter-wave (mm-wave) CMOS power amplifiers (PAs), nevertheless, remains challenging due to the low breakdown voltages of CMOS transistors and the loss from on-chip matching networks. These limitations have reduced the design space of CMOS power amplifiers to narrow-band, low linearity metrics often with insufficient gain, output power, and efficiency.
A new topology for implementing power amplifiers based on stacking of CMOS SOI transistors is proposed. The input RF …
Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong
Non-Silicon Mosfets And Circuits With Atomic Layer Deposited Higher-K Dielectrics, Lin Dong
Open Access Dissertations
The quest for technologies beyond 14nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on higher-k gate dielectrics integration with high mobility channel materials such as III-V semiconductors and germanium. Ternary oxides, such as La2-xYxO3 and LaAlO3, have been considered as strong candidates due to their high dielectric constants and good thermal stability. Meanwhile, the unique abilities of delivering large area uniform thin film, excellent controlling of composition and thickness to an atomic level, which are keys to ultra-scaled devices, have made atomic layer deposition (ALD) technique an excellent choice.
In this thesis, we systematically study the atomic …