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Neutron irradiation<br />Semiconductors<br />Transistors -- Effect of radiation on
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Annealing Characteristics Of Neutron Irradiated Silicon Transistors, Joseph Robert Chott
Annealing Characteristics Of Neutron Irradiated Silicon Transistors, Joseph Robert Chott
Masters Theses
"When a transistor is subjected to neutron irradiation, a component of base current proportional to neutron fluence is induced. From the effects of annealing on the base and collector currents, the conclusion was drawn that there is an apparent difference in the annealing characteristics between the neutral and the space-charge regions of the semiconductor device. This study of the anomalous annealing indicates that the neutron-induced component of base current is a result of one, or a combination, of the following mechanisms: a quasi-tunneling recombination phenomena in the emitter-base space-charge region, or an influence of the p-n junction electric field on …