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Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin
Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin
LSU Doctoral Dissertations
This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …
Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad
Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad
LSU Doctoral Dissertations
The Moore’s law of scaling of metal oxide semiconductor field effect transistor (MOSFET) had been a driving force toward the unprecedented advancement in development of integrated circuit over the last five decades. As the technology scales down to 7 nm node and below following the Moore’s law, conventional MOSFETs are becoming more vulnerable to extremely high off-state leakage current exhibiting a tremendous amount of standby power dissipation. Moreover, the fundamental physical limit of MOSFET of 60 mV/decade subthreshold slope exacerbates the situation further requiring current transport mechanism other than drift and diffusion for the operation of transistors. One way to …