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Electrical and Computer Engineering

Electrical and Computer Engineering Faculty Research and Publications

Avalanche photodiodes

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Full-Text Articles in Engineering

Bit Error Rates For Ultrafast Apd Based Optical Receivers: Exact And Large Deviation Based Asymptotic Approaches, Peng Sun, Majeed M. Hayat, Abhik K. Das Sep 2009

Bit Error Rates For Ultrafast Apd Based Optical Receivers: Exact And Large Deviation Based Asymptotic Approaches, Peng Sun, Majeed M. Hayat, Abhik K. Das

Electrical and Computer Engineering Faculty Research and Publications

Exact analysis as well as asymptotic analysis, based on large-deviation theory (LDT), are developed to compute the bit-error rate (BER) for ultrafast avalanche-photodiode (APD) based optical receivers assuming on-off keying and direct detection. The effects of intersymbol interference (ISI), resulting from the APD's stochastic avalanche buildup time, as well as the APD's dead space are both included in the analysis. ISI becomes a limiting factor as the transmission rate approaches the detector's bandwidth, in which case the bit duration becomes comparable to APD's avalanche buildup time. Further, the effect of dead space becomes significant in high-speed APDs that employ thin …


Dependence Of The Performance Of Single Photon Avalanche Diodes On The Multiplication Region Width, David A. Ramirez, Majeed M. Hayat, Mark A. Itzler Dec 2008

Dependence Of The Performance Of Single Photon Avalanche Diodes On The Multiplication Region Width, David A. Ramirez, Majeed M. Hayat, Mark A. Itzler

Electrical and Computer Engineering Faculty Research and Publications

The dependence of the performance of separate-absorption-multiplication (SAM) single-photon avalanche diodes (SPADs) on the width of the multiplication region is theoretically investigated. The theory is applied to SAM SPADs with InP homojunction multiplication regions and InAlAs-InP heterojunction multiplication regions. In both cases the absorber layer is InGaAs. Two scenarios for the dark counts are considered: (i) low-temperature operation, when the number of dark carriers is dominated by field-assisted mechanisms of band-to-band tunneling and tunneling through defects; and (ii) room-temperature operation, when the number of dark carriers in the multiplication region is dominated by the generation/recombination mechanism. The analysis utilizes a …


Statistical Correlation Of Gain And Buildup Time In Apds And Its Effects On Receiver Performance, Peng Sun, Majeed M. Hayat, Bahaa E.A. Saleh, Malvin Carl Teich Feb 2006

Statistical Correlation Of Gain And Buildup Time In Apds And Its Effects On Receiver Performance, Peng Sun, Majeed M. Hayat, Bahaa E.A. Saleh, Malvin Carl Teich

Electrical and Computer Engineering Faculty Research and Publications

This paper reports a novel recurrence theory that enables us to calculate the exact joint probability density function (pdf) of the random gain and the random avalanche buildup time in avalanche photodiodes (APDs) including the effect of dead space. Such calculations reveal a strong statistical correlation between the gain and the buildup time for all widths of the multiplication region. To facilitate the calculation of the photocurrent statistics in the presence of this correlation, the impulse-response function of the APD is approximately modeled by a function of time whose prespecified shape is appropriately parameterized by two random variables: the gain …


Computation Of Bit-Error Probabilities For Optical Receivers Using Thin Avalanche Photodiodes, Byonghyok Choi, Majeed M. Hayat Jan 2006

Computation Of Bit-Error Probabilities For Optical Receivers Using Thin Avalanche Photodiodes, Byonghyok Choi, Majeed M. Hayat

Electrical and Computer Engineering Faculty Research and Publications

The large-deviation-based asymptotic-analysis and importance-sampling methods for computing bit-error probabilities for avalanche-photodiode (APD) based optical receivers, developed by Letaief and Sadowsky [IEEE Trans. Inform. Theory, vol. 38, pp. 1162-1169, 1992], are extended to include the effect of dead space, which is significant in high-speed APDs with thin multiplication regions. It is shown that the receiver's bit-error probability is reduced as the magnitude of dead space increases relative to the APD's multiplication-region width. The calculated error probabilities and receiver sensitivities are also compared with those obtained from the Chernoff bound.