Engineering Commons^™

Investigation Of Nbnx Thin Films And Nanoparticles Grown By Pulsed Laser Deposition And Thermal Diffusion, Ashraf Hassan Farha

Electrical & Computer Engineering Theses & Dissertations

Niobium nitride films (NbNx) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (λ = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbNx films.

When the …

Reflection High-Energy Electron Diffraction Studies Of Indium Phosphide (100) And Growth On Indium And Indium Nitride On Silicon (100), Mohamed Abd-Elsattar Hafez

Electrical & Computer Engineering Theses & Dissertations

Study of the effects of atomic hydrogen exposure on structure and morphology of semiconductor surfaces is important for fundamental properties and applications. In this dissertation, the electron yield of a hydrogen-cleaned indium phosphide (InP) surface was measured and correlated to the development of the surface morphology, which was monitored by in situ reflection high-energy electron diffraction (RHEED). Atomic hydrogen treatment produced a clean, well-ordered, and (2x4)-reconstructed InP(100) surface. The quantum efficiency, after activation to negative electron affinity, and the secondary electron emission were shown to increase with hydrogen cleaning time. RHEED patterns of low-index InP(100) surface were modified by the …

Reflection-High Energy Electron Diffraction Study Of Si(100) Homoepitaxy By Femtosecond Pulsed Laser Deposition, Mohammed S. Hegazy

Electrical & Computer Engineering Theses & Dissertations

The dynamics of femtosecond pulsed laser deposition (fsPLD) of Si(!00)-1 x I and Si(!00)-2x I homoepitaxy are studied by in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). The effects of substrate temperature, laser fluence and the pressure of a passive gas on the Si(!00)-1 x I growth mode are discussed. It is shown that films grow following the Volmer-Weber (3D) growth mode. The substrate temperature largely affects the morphology of the grown film. Below ~ 400 °C (at laser fluence of~ 1.9 J/cm²), randomly oriented 3D clusters are grown. This is shown …

Preparation And Surface Studies Of Negative Electron Affinity Semiconductors Photocathodes, Khaled A. Elamrawi

Electrical & Computer Engineering Theses & Dissertations

Fabrication of high quantum efficiency, long lifetime negative electron affinity photocathodes is important for applications such as photomultipliers, image intensifiers, electron beam lithography, electron microscopy, and polarized electron sources. The surface cleanliness of the III-V semiconductor photocathode is crucial in obtaining high photosensitivity.

GaAs(100) and InP(100) photocathodes are prepared by atomic hydrogen cleaning. The cleaning effect on the photocathode performance is discussed. The surface degradation mechanisms which reduce the photocathode lifetime are presented. The photocathode surface cleanliness, structure, and morphology are studied using reflection high-energy electron diffraction (RHEED).

Quantum efficiencies of ∼14% and 8% are obtained for GaAs and InP, …