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Evaluation Of Degradation In Gan High Electron Mobility Transistors Due To The Inverse Piezoelectric Effect, Deepthi Nagulapally

Electrical & Computer Engineering Theses & Dissertations

It has recently been postulated that high voltage stress can result in the degradation of nanoscale structures that are made up of piezoelectric materials. The inverse piezoelectric effect (IPE) is believed to be the likely reason for this degradation mechanism. Basically, the IPE leads to the creation of high internal stresses driven by the presence of an electric field. Consequently, devices based on piezoelectric materials are postulated to undergo defect formation induced by the large mechanical stress arising from the inverse piezoelectric effect in the presence of an applied bias. GaN based devices are mostly observed to show this degradation …