Engineering Commons^™

A Reliability Prediction Method For Phase-Change Devices Using Optimized Pulse Conditions, Martin Jared Barclay

Boise State University Theses and Dissertations

Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional complementary metal-oxide-semiconductor (CMOS) processes, PCRAM has reached the point of volume production. However, due to the temperature dependent nature of the phase-change memory device material and the high electrical and thermal stresses applied during the programming operation, the standard methods of high-temperature (Temperature > 125 °C) accelerated retention testing may not be able to accurately predict bit sensing failures or determine slight pulse condition changes needed if the device were to be …

Investigations Of Conduction Mechanisms Of Ion-Conducting, Bridging Memory Devices (Cbram/Pmc/Ecm), Kyle Bradley Campbell

Boise State University Theses and Dissertations

Electron storage memory devices are approaching the minimum dimensions that are physically possible due to the onward march of Moore’s law. To continue to enable the increased memory densities needed for today’s applications, especially low power and size constrained mobile devices, new memory solutions are needed. Several candidates are emerging in this space. Metal ion-conducting memory devices are being investigated due to excellent scalability, speed, and low power. These devices are part of a memory class called resistive memory. In the literature, they are referred to as CBRAM (conductive bridge random access memory), PMC (programmable metallization cell), ECM (electrochemical metallization …

Electrical Switching Studies Of Chalcogenide-Based Ion-Conducting Variable Resistance Devices, Beth Rose Cook

Boise State University Theses and Dissertations

In this work, ion-conducting devices using layers of chalcogenide materials are explored as potential non-volatile memory devices. This technology is also known in the literature as conductively bridged RAM (CBRAM), programmable metallization cell (PMC), and programmable conductor RAM (PCRAM; not to be confused with the acronym PCRAM as used to denote phase-change memory).

Electrical measurements with five different programming currents at four temperatures have been performed on two-terminal devices comprised of silver with a metal-selenide and germanium-chalcogenide layer. The metal-selenide layer is Sb₂Se₃, SnSe, PbSe, In₂Se₃, or Ag₂Se. The germanium-chalcogenide …

Phase Change Memory: Array Development And Sensing Circuits Using Delta-Sigma Modulation, Mahesh Balasubramanian

Boise State University Theses and Dissertations

Chalcogenide based non-volatile Phase Change Memory (PCM) circuits were designed to investigate new emerging non-volatile memory technologies. An overview of the operation of chalcogenide-based resistive PCM for circuit designers is presented. MOSIS fabrication service was used along with Idaho Microfabrication Lab at Boise State University to develop PCM chips. Experimental results show successful integration of two discreet processing services for developing chalcogenide based non-volatile memory circuits. Possible multi-state capabilities were observed during the testing of single memory bits.

Four Delta Sigma Modulation (DSM) based sensing techniques for resistive memory are presented. The proposed sensing techniques have the advantage over traditional …