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Electrical and Computer Engineering

University of South Carolina

Polarization

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Finite Element Analysis Simulations Of Micro And Nano-Electromechanical Sensors For Design Optimization, Nicholas Frank Deroller Dec 2014

Finite Element Analysis Simulations Of Micro And Nano-Electromechanical Sensors For Design Optimization, Nicholas Frank Deroller

Theses and Dissertations

Micro and Nano-electromechanical sensors (MEMS and NEMS) provide a means of actively sensing minute changes in the surrounding environment. Small changes in temperature, momentum, and strain may be sensed in passive modes while greater sensing possibilities exist in active modes. Theoretical femto-gram resolution mass detection and heated element sensing methods may be used while volatile organic compound (VOC) sensing may be achieved when combined with a functionalization layer or device heating. These devices offer a great reduction in cost and offer increased mobility by allowing a "lab-on-chip" solution for the prospective user while also greatly reducing the amount of energy …


Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai Nov 2002

Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai

Faculty Publications

Polarizationeffects have been studied in GaN/AlGaN multiple quantum wells(MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence(PL) analysis. Quantum structures were grown on [0001]-oriented sapphire substrates (C plane) and single-crystalline [11̄00]-oriented freestanding GaN (M plane) using the metalorganic chemical vapor deposition technique. Strong PL spectrum line blueshifts (up to 140 meV) which are correlated with the excitation intensity have been obtained for C-plane MQWs, whereas no shift has been observed for M-plane MQWs.Theoretical calculations and comparison with the PL data confirm that the built-in electric field for C-plane structures is much stronger than the field present for M-plane MQWs. …