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Electrical and Computer Engineering
University of Nevada, Las Vegas
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Using The Inelastic Background In Hard X-Ray Photoelectron Spectroscopy For A Depth-Resolved Analysis Of The Cds / Cu(In,Ga)Se < Inf > 2 < / Inf > Interface, Dirk Hauschild, Ralph Steininger, Dimitrios Hariskos, Wolfram Witte, Sven Tougaard, Clemens Heske, Lothar Weinhardt
Using The Inelastic Background In Hard X-Ray Photoelectron Spectroscopy For A Depth-Resolved Analysis Of The Cds / Cu(In,Ga)Se < Inf > 2 < / Inf > Interface, Dirk Hauschild, Ralph Steininger, Dimitrios Hariskos, Wolfram Witte, Sven Tougaard, Clemens Heske, Lothar Weinhardt
Chemistry and Biochemistry Faculty Research
The inelastic background of hard x-ray photoelectron spectroscopy data is analyzed to paint a depth-resolved picture of the CdS/Cu(In,Ga)Se2 (CdS/CIGSe) layer structure. The CdS/CIGSe interface is the central component in next-generation chalcopyrite thin-film photovoltaic devices. By analyzing both, the (unscattered) core-level peaks and the inelastic background, and by varying the excitation photon energy from 2.1 up to 14 keV, we can derive photoemission information over a broad range of electron kinetic energies and, hence, sampling depths. With this complementary information, the CdS film thickness of a CdS/CIGSe interface can be accurately determined as a function of the CdS deposition time. …