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Investigation Of Gate Dielectric Materials And Dielectric/Silicon Interfaces For Metal Oxide Semiconductor Devices, Lei Han
Theses and Dissertations--Electrical and Computer Engineering
The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainly contributed to the scaling of the individual component. After decades of development, the scaling trend is approaching to its limitation, and there is urgent needs for the innovations of the materials and structures of the MOS devices, in order to postpone the end of the scaling. Atomic layer deposition (ALD) provides precise control of the deposited thin film at the atomic scale, and has wide application not only in the MOS technology, but also in other nanostructures. In this dissertation, I study rapid thermal processing (RTP) treatment of thermally grown …
Improvement Of Silicon Oxide Quality Using Heat Treatment, Lei Han
Improvement Of Silicon Oxide Quality Using Heat Treatment, Lei Han
Theses and Dissertations--Electrical and Computer Engineering
In decades, the tremendous development of integrated circuits industry could be mostly attributed to SiO2, since its satisfactory properties as a gate dielectric candidate. The effectivity of SiO2 has been challenged since dielectric layer was scaled down below 3nm, when the gate leakage current of SiO2 became unacceptable. Institution to silicon-based CMOS techniques were proposed, but they have their own limitations. Nowadays, materials with high dielectric constants are mainstream gate dielectric materials in industry, but a SiO2 interfacial layer is still necessary to avoid gap between gate dielectric layer and Si substrate, and to minimize interface trap charges. In this …
Phonon-Energy-Coupling-Enhancement Effect And Its Applications, Pang-Leen Ong
Phonon-Energy-Coupling-Enhancement Effect And Its Applications, Pang-Leen Ong
University of Kentucky Doctoral Dissertations
Silicon Oxide/Oxynitride (SiO2/SiON) has been the mainstream material used for gate dielectric for MOS transistors for the past 30 years. The aggressive scaling of the feature size of MOS transistor has limited the ability of SiO2/SiON to work effectively as the gate dielectric to modulate the conduction of current of MOS transistors due to excess leakage current dominated by direct quantum tunneling. Due to this constraint, alternative gate dielectric/high-k is being employed to reduce the leakage current in order to maintain the rate of scaling of MOS transistors. However, the cost involved in the implementation of …