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Full-Text Articles in Engineering
Parameters Affecting The Resistivity Of Lp-Ebid Deposited Copper Nanowires, Gabriel Smith
Parameters Affecting The Resistivity Of Lp-Ebid Deposited Copper Nanowires, Gabriel Smith
Theses and Dissertations--Electrical and Computer Engineering
Electron Beam Induced Deposition (EBID) is a direct write fabrication process with applications in circuit edit and debug, mask repair, and rapid prototyping. However, it suffers from significant drawbacks, most notably low purity. Work over the last several years has demonstrated that deposition from bulk liquid precursors, rather than organometallic gaseous precursors, results in high purity deposits of low resistivity (LPEBID). In this work, it is shown that the deposits resulting from LP-EBID are only highly conductive when deposited at line doses below 25μC/cm. When the dose exceeds this value, the resulting structure is highly porous providing a poor conductive …
Feedback Control For Electron Beam Lithography, Yugu Yang
Feedback Control For Electron Beam Lithography, Yugu Yang
Theses and Dissertations--Electrical and Computer Engineering
Scanning-electron-beam lithography (SEBL) is the primary technology to generate arbitrary features at the nano-scale. However, pattern placement accuracy still remains poor compared to its resolution due to the open-loop nature of SEBL systems. Vibration, stray electromagnetic fields, deflection distortion and hysteresis, substrate charging, and other factors prevent the electron-beam from reaching its target position and one has no way to determine the actual beam position during patterning with conventional systems. To improve the pattern placement accuracy, spatial-phase-locked electron-beam lithography (SPLEBL) provides feedback control of electron-beam position by monitoring the secondary electron signal from electron-transparent fiducial grids on the substrate. While …
Direct Electron-Beam Patterning Of Teflon-Af And Its Application To Optical Waveguiding, Vijayasree Karre
Direct Electron-Beam Patterning Of Teflon-Af And Its Application To Optical Waveguiding, Vijayasree Karre
University of Kentucky Master's Theses
Thin films of Teflon AF have been directly patterned by electron-beam lithography without the need for post exposure chemical development. The relationship between pattern depth and exposure dose was found to be linear over a wide range of doses. Pattern depth was also observed to be dependent on initial film thickness. Teflon AF can be directly patterned at doses similar to typical e-beam resists. High resolution features as small as ~200 nm have been resolved. FTIR measurements revealed that CF3 and fluorinated dioxole groups play a significant role in the patterning mechanism. Teflon AF films also exhibited an increase in …