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Electrical and Computer Engineering

Universitas Indonesia

Thin films

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Full-Text Articles in Engineering

Structural And Photoluminescence Properties Of Zno Thin Films Deposited By Ultrasonic Spray Pyrolysis, Iwan Sugihartono, Erfan Handoko, Vivi Fauzia, Artoto Arkundato, Lara Permata Sari Apr 2018

Structural And Photoluminescence Properties Of Zno Thin Films Deposited By Ultrasonic Spray Pyrolysis, Iwan Sugihartono, Erfan Handoko, Vivi Fauzia, Artoto Arkundato, Lara Permata Sari

Makara Journal of Technology

Zinc oxide (ZnO) thin films on a silicon (Si) (111) substrate were grown herein using ultrasonic spray pyrolysis at 450 °C with different Zn concentrations. The ZnO thin films had X-ray diffraction patterns of a polycrystalline hexagonal wurtzite structure. The (002) and (101) peak intensities changed under different Zn concentrations. Furthermore, according to Scherer's and Stokes–Wilson equations, the crystallite size and the internal strain of the ZnO thin films in the (002) and (101) peaks changed with the Zn concentration. Optically, the photoluminescence spectra indicated that the ratio of the UV/GB emission of the ZnO thin films was the highest …


Effects Of Deposition Parameters And Oxygen Addition On Properties Of Sputtered Indium Tin Oxide Films, Badrul Munir, Rachmat Adhi Wibowo, Kim Kyoo Ho Nov 2012

Effects Of Deposition Parameters And Oxygen Addition On Properties Of Sputtered Indium Tin Oxide Films, Badrul Munir, Rachmat Adhi Wibowo, Kim Kyoo Ho

Makara Journal of Technology

Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10-4 Ω•cm was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of …